KTB1366 transistor (pnp) features power dissipation p cm: 2 w (tamb=25 ) collector current i cm: -3 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -1 ma, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -50 ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e = -1m a, i c =0 -7 v collector cut-off current i cbo v cb = -60 v, i e =0 -100 a emitter cut-off current i ebo v eb = -7 v, i c =0 -100 a h fe(1) v ce = -5 v, i c = -0.5 a 60 200 dc current gain h fe(2) v ce = -5 v, i c = -3 a 20 collector-emitter saturation voltage v ce(sat) i c = -2 a, i b = -0.2 a -1 v base-emitter voltage v be v ce = -5 v, i c = -0.5 a -1 v transition frequency f t v ce = -5 v, i c = -0.5 a 9 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 150 pf fall time t f 0.5 s storage time t s i c =-2a, i b1 =-i b2 =-0.2a v cc =-30v 1.7 s classification of h fe(1) rank o y range 60-120 100-200 marking 1 2 3 to-220f 1. base 2. collector 3. emitter KTB1366 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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